The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Mar. 31, 2015
Swegan Ab, Linköping, SE;
Erik Janzén, Linköping, SE;
Jr-Tai Chen, Vikingstad, SE;
SWEGAN AB, Linkoping, SE;
Abstract
The present document discloses an AlGaN/GaN heterostructure, wherein x is 0.10<x<0.60, preferably 0.13<x<0.40, most preferably 0.15<x<0.25. The heterostructure comprises an AlGaN layer formed directly on a GaN layer. The heterostructure presents a room temperature 2DEG mobility of 1800 to 2300 cm/Vs, preferably 1900 to 2300 cm/Vs, most preferably 2000 to 2300 cm/Vs, and a pinch-off voltage which differs by 0.3 V or less, preferably by 0.25 V or less, most preferably by 0.20 V or less from a theoretical value of the pinch-off voltage, wherein the theoretical value of the pinch-off voltage is estimated based on an electrostatic band diagram obtained by XRD, of the AlGaN/GaN heterostructure.
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