The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Feb. 29, 2016
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Xiaoying Meng, Shanghai, CN;

Qiuhua Han, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 21/0273 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/28114 (2013.01); H01L 21/28123 (2013.01); H01L 21/31058 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76892 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/5283 (2013.01); H01L 27/088 (2013.01); H01L 28/20 (2013.01); H01L 29/0649 (2013.01); H01L 29/4916 (2013.01);
Abstract

A method is provided for fabricating stripe structures. The method includes providing a substrate; and forming a to-be-etched layer on the substrate. The method also includes forming a hard mask pattern having a first stripe on the to-be-etched layer; and forming a photoresist pattern having a stripe opening on the to-be-etched layer and the hard mask pattern having the first stripe. Further, the method includes forming a polymer layer on a top surface and side surfaces of the photoresist pattern to reduce a width of the stripe opening; forming hard mask patterns having a second stripe by etching the hard mask pattern having the first stripe using the photoresist pattern having the polymer layer as an etching mask; and forming the stripe structures by etching the to-be-etching layer using the hard mask pattern having the second stripe as an etching mask until the substrate is exposed.


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