logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10403723 B1

PDFFull Text
Date of Patent:
Sep. 03, 2019

Filed:

Jan. 17, 2014

Semiconductor device and semiconductor circuit including the device

Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

John Twynam, Seoul, KR;

Assignee:

LG Innotek Co., Ltd., Seoul, KR;

Attorney:

KED & Associates, LLP

Primary Examiner:

Robert K Carpenter

Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/872 (2006.01); H01L 29/778 (2006.01); H01L 29/36 (2006.01); H01L 29/20 (2006.01); H01L 27/06 (2006.01); H01L 27/095 (2006.01); H01L 27/08 (2006.01); H01L 29/417 (2006.01); H01L 27/085 (2006.01); H01L 49/02 (2006.01); H01L 21/8252 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 27/0676 (2013.01); H01L 27/085 (2013.01); H01L 27/0814 (2013.01); H01L 27/095 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/41766 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 21/8252 (2013.01); H01L 27/0207 (2013.01);
Abstract

A semiconductor device is disclosed. The semiconductor device includes a second conductive type substrate including a first first-conductive-type doping layer and a plurality of devices on the second conductive type substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the first first-conductive-type doping layer, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the first first-conductive-type doping layer and the first nitride semiconductor layer, a first contact electrically connected to the first heterojunction interface, and a contact connector electrically connecting the first contact to the first first-conductive-type doping layer.

Find Patent Forward Citations

Loading…