The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Dec. 06, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong-ho Ahn, Hwaseong-si, KR;
Zhe Wu, Suwon-si, KR;
Soon-oh Park, Suwon-si, KR;
Hideki Horii, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01);
Abstract
A memory device is provided. The memory device includes a variable resistance layer. A selection device layer is electrically connected to the variable resistance layer. The selection device layer includes a chalcogenide switching material having a composition according to chemical formula 1 below,[GeSeTe][X]  (1)