The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Jun. 29, 2016
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Paul Gondcharton, Grenoble, FR;

Lamine Benaissa, Massy, FR;

Bruno Imbert, Grenoble, FR;

Guillaume Rodriguez, Le Champ Pres Froges, FR;

Chiara Sabbione, Asti, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B81C 3/00 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); B81C 3/001 (2013.01); H01L 21/02002 (2013.01); H01L 21/2007 (2013.01); H01L 24/27 (2013.01); H01L 21/02194 (2013.01); H01L 21/02266 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/80894 (2013.01); H01L 2924/0536 (2013.01);
Abstract

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.


Find Patent Forward Citations

Loading…