The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Feb. 12, 2018
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Sungho Kang, Seoul, KR;
Minho Cheong, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/66 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/538 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 22/22 (2013.01); H01L 23/481 (2013.01); H01L 23/52 (2013.01); H01L 23/525 (2013.01); H01L 23/5226 (2013.01); H01L 23/5382 (2013.01); H01L 23/5386 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06544 (2013.01);
Abstract
Exemplary embodiments of the present invention provides a three dimensional integrated circuit and a method for repairing the three dimensional integrated circuit which dispose a signal through silicon via (STSV) or a redundant through silicon via (RTSV) for each basic unit in which a through silicon via (TSV) and a switch are combined and connect repair paths among the basic units to efficiently repair a defective through silicon via which exists in a dense area by using a small number of redundant resources.