The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Jun. 08, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Susmit Singha Roy, Sunnyvale, CA (US);
Ziqing Duan, San Jose, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01J 37/32715 (2013.01); H01L 21/31122 (2013.01); H01L 21/76801 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01); H01L 21/76888 (2013.01); H01L 21/76897 (2013.01); H01J 37/32357 (2013.01); H01L 21/76807 (2013.01); H01L 21/76834 (2013.01); H01L 21/76849 (2013.01); H01L 21/76883 (2013.01); H01L 23/53266 (2013.01);
Abstract
A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.