The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Jun. 15, 2015
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Nobuyuki Kuboi, Kanagawa, JP;
Tetsuya Tatsumi, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
Etching characteristics in a case where a workpiece contains a nitrogen compound and an etching gas such as a CHxFy-based gas contains hydrogen are obtained. In a flux calculation step, an information processing apparatus calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model. In a protection film layer calculation step, the information processing apparatus calculates a thickness of the protection film layer by using a calculation equation for calculating a thickness of an etched protection film layer based on the basis of a removal term for describing removal of the protection film layer, the removal term being selected depending on a comparison result of comparing the plurality of fluxes.