The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Apr. 06, 2015
Marko J. Tadjer, Springfield, VA (US);
Boris N. Feigelson, Springfield, VA (US);
Nadeemullah A. Mahadik, Springfield, VA (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Eugene A. Imhoff, Washington, DC (US);
Jordan Greenlee, Alexandria, VA (US);
Marko J. Tadjer, Springfield, VA (US);
Boris N. Feigelson, Springfield, VA (US);
Nadeemullah A. Mahadik, Springfield, VA (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Eugene A. Imhoff, Washington, DC (US);
Jordan Greenlee, Alexandria, VA (US);
Abstract
A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.