The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Aug. 07, 2018
Applicant:

Comsats University Islamabad, Islamabad, PK;

Inventors:

Arshad Saleem Bhatti, Islamabad, PK;

Uzma Nosheen, Islamabad, PK;

Liaquat Aziz, Islamabad, PK;

Nashmia Sabih, Islamabad, PK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02474 (2013.01); H01L 21/02381 (2013.01); H01L 21/02557 (2013.01); H01L 21/02603 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01); H01L 33/0095 (2013.01); H01L 33/28 (2013.01);
Abstract

According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.


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