The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Aug. 28, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Hidehiro Yanai, Toyama, JP;

Shin Hiyama, Toyama, JP;

Toshiya Shimada, Toyama, JP;

Yukinori Aburatani, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32522 (2013.01); B08B 7/0035 (2013.01); H01J 37/321 (2013.01); H01J 37/3211 (2013.01); H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01L 21/02041 (2013.01); H01L 21/02233 (2013.01); H01L 21/02247 (2013.01); H01L 21/02249 (2013.01); H01L 21/3065 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01J 2237/338 (2013.01); H01J 2237/3387 (2013.01); H01L 21/31138 (2013.01);
Abstract

The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.


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