The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Jun. 30, 2016
Applicants:
Han-na Cho, Incheon, KR;
Jong-kyu Kim, Seongnam-si, KR;
Hyuk Kim, Seongnam-si, KR;
Jongchul Park, Seongnam-si, KR;
Inventors:
Han-Na Cho, Incheon, KR;
Jong-Kyu Kim, Seongnam-si, KR;
Hyuk Kim, Seongnam-si, KR;
Jongchul Park, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32009 (2013.01); H01J 37/3266 (2013.01); H01J 37/32357 (2013.01); H01J 37/32403 (2013.01); H01J 37/32422 (2013.01); H01J 37/32669 (2013.01); H01J 37/32715 (2013.01);
Abstract
An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.