The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Sep. 09, 2015
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

François Tailliet, Fuveau, FR;

Marc Battista, Marseilles, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 16/14 (2006.01); G11C 16/08 (2006.01); G11C 8/12 (2006.01); G11C 8/14 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 5/025 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 8/12 (2013.01); G11C 8/14 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01);
Abstract

A non-volatile memory device includes a matrix memory plane with columns of memory words respectively formed on each row of the memory plane by groups of memory cells and control elements respectively associated with the memory words of each row. At least some of the control elements associated with the memory words of the corresponding row form at least one control block of B control elements disposed next to one another, adjacent to a memory block containing the B memory words disposed next to one another and associated with these B control elements, a first electrically-conducting link connecting one of the B control elements to all the control electrodes of the state transistors of the corresponding group of memory cells and B-1 second electrically-conducting link(s) respectively connecting the B-1 control element(s) to all the control electrodes of the state transistors of the B-1 corresponding group(s) of memory cells.


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