The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Nov. 20, 2017
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Jeong Ho Yi, Seoul, KR;
Jun Ho Cheon, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 8/14 (2006.01); G11C 8/10 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0033 (2013.01); G11C 13/0004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 8/10 (2013.01); G11C 8/14 (2013.01);
Abstract
A phase change memory device may include a plurality of word lines, a plurality of bit lines, a phase change memory cell, and a discharging circuit. The word lines and the bit lines may intersect each other. The phase change memory cell may be positioned at an intersection point between the word lines and the bit lines. The discharging circuit may be configured to apply a ground voltage to a non-selected word line adjacent to a selected word line or a non-selected bit line adjacent to a selected bit line.