The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Sep. 26, 2016
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Jun Ho Cheon, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0655 (2013.01); G06F 3/0688 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0066 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/15 (2013.01);
Abstract
A non-volatile memory apparatus may include a program current generation circuit, a clamping circuit and a voltage generation circuit. The program current generation circuit may increase a program current based on a memory cell current flowing through a memory cell. The clamping circuit may clamp the memory cell current. The voltage generation circuit may apply a voltage corresponding to a verification-write voltage to the memory cell. Therefore, the verification-write operation may be performed to the memory cell.