The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Feb. 06, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sang-Ho Lim, Suwon-si, KR;
Sang-Ho Lee, Seoul, KR;
Chea-Ok Ko, Yongin-si, KR;
Jong-Wan Shim, Hwaseong-si, KR;
Jeong-Nam Cheon, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd, Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G06F 17/14 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01);
Abstract
A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.