The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Sep. 07, 2017
Applicant:

Ut-battelle, Llc, Oak Ridge, TN (US);

Inventors:

Albina Y. Borisevich, Knoxville, TN (US);

Stephen Jesse, Knoxville, TN (US);

Sergei V. Kalinin, Knoxville, TN (US);

Andrew R. Lupini, Knoxville, TN (US);

Raymond R. Unocic, Knoxville, TN (US);

Qian He, Cardiff, GB;

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/00 (2006.01); H01J 37/317 (2006.01); H01J 37/30 (2006.01); C30B 19/10 (2006.01); C30B 29/02 (2006.01); C30B 29/32 (2006.01); C30B 29/16 (2006.01); C30B 30/00 (2006.01);
U.S. Cl.
CPC ...
C30B 1/00 (2013.01); C30B 19/10 (2013.01); C30B 29/02 (2013.01); C30B 29/16 (2013.01); C30B 29/32 (2013.01); C30B 30/00 (2013.01); H01J 37/3005 (2013.01); H01J 37/3174 (2013.01); H01J 2237/31747 (2013.01);
Abstract

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.


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