The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2019

Filed:

Feb. 10, 2015
Applicants:

Lg Electronics Inc., Seoul, KR;

Research & Business Foundation Sungkyunkwan University, Suwon-si, Gyeonggi-do, KR;

Inventors:

Minseok Choi, Seoul, KR;

Changgu Lee, Suwon-si, KR;

Youngchan Kim, Suwon-si, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
C23C 16/305 (2013.01); C23C 14/0021 (2013.01); C23C 14/0623 (2013.01); C23C 14/228 (2013.01); C23C 16/46 (2013.01);
Abstract

The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.


Find Patent Forward Citations

Loading…