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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10400151 B1

PDFFull Text
Date of Patent:
Sep. 03, 2019

Filed:

Aug. 02, 2017

Agglomerated boron nitride particles, composition containing said particles, and three- dimensional integrated circuit having layer comprising said composition

Applicant:

Mitsubishi Chemical Corporation, Chiyoda-ku, JP;

Inventors:

Masanori Yamazaki, Yokohama, JP;

Mari Abe, Yokohama, JP;

Tomohide Murase, Yokohama, JP;

Yasuhiro Kawase, Kitakyushu, JP;

Makoto Ikemoto, Kitakyushu, JP;

Hideki Kiritani, Chiyoda-ku, JP;

Yasunori Matsushita, Yokkaichi, JP;

Assignee:

Mitsubishi Chemical Corporation, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Alexandre F Ferre

Int. Cl.
CPC ...
C09K 5/14 (2006.01); C08G 59/40 (2006.01); C01B 21/064 (2006.01); H01L 27/04 (2006.01); C08L 63/00 (2006.01); C01B 35/14 (2006.01); H01L 23/00 (2006.01); H01L 21/77 (2017.01); C08K 3/38 (2006.01);
U.S. Cl.
CPC ...
C09K 5/14 (2013.01); C01B 21/064 (2013.01); C01B 21/0648 (2013.01); C01B 35/146 (2013.01); C08G 59/4042 (2013.01); C08L 63/00 (2013.01); H01L 21/77 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 27/04 (2013.01); C01P 2004/03 (2013.01); C01P 2004/30 (2013.01); C01P 2004/45 (2013.01); C01P 2004/50 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2006/11 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01); C01P 2006/32 (2013.01); C01P 2006/80 (2013.01); C08K 3/38 (2013.01); C08K 2003/385 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/15788 (2013.01); Y10T 156/10 (2015.01); Y10T 428/25 (2015.01); Y10T 428/2982 (2015.01);
Abstract

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

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