The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jul. 26, 2018
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Kengo Mochiki, Kariya, JP;

Mitsunori Kimura, Kariya, JP;

Hiroshi Shimizu, Kariya, JP;

Yasuyuki Ohkouchi, Kariya, JP;

Yuu Yamahira, Kariya, JP;

Tetsuya Matsuoka, Kariya, JP;

Kazuma Fukushima, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/088 (2006.01); H01L 27/06 (2006.01); H02M 3/158 (2006.01); H02M 7/537 (2006.01); H03K 17/081 (2006.01); H03K 17/0412 (2006.01); H03K 17/687 (2006.01); H02M 1/08 (2006.01); H02M 7/00 (2006.01); H02M 7/5387 (2007.01); B60L 3/00 (2019.01); B60L 15/00 (2006.01); H02P 27/06 (2006.01); H03K 17/12 (2006.01); H02M 1/00 (2006.01); H02P 27/08 (2006.01);
U.S. Cl.
CPC ...
H02M 1/088 (2013.01); B60L 3/003 (2013.01); B60L 3/0084 (2013.01); B60L 15/007 (2013.01); H01L 27/0623 (2013.01); H02M 1/08 (2013.01); H02M 3/158 (2013.01); H02M 7/003 (2013.01); H02M 7/537 (2013.01); H02M 7/53871 (2013.01); H03K 17/0412 (2013.01); H03K 17/08116 (2013.01); H03K 17/6871 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48247 (2013.01); H02M 2001/0054 (2013.01); H02P 27/06 (2013.01); H02P 27/08 (2013.01); H03K 17/127 (2013.01); H03K 2217/0036 (2013.01); Y02T 10/644 (2013.01); Y02T 10/645 (2013.01);
Abstract

A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.


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