The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Sep. 12, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Ryo Kanda, Tokyo, JP;

Hiroshi Kuroiwa, Tokyo, JP;

Tetsu Toda, Tokyo, JP;

Yasushi Nakahara, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 7/08 (2006.01); H02H 1/04 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H03K 17/0416 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H02H 7/0838 (2013.01); H01L 29/405 (2013.01); H01L 29/7816 (2013.01); H01L 29/861 (2013.01); H02H 1/04 (2013.01); H03K 17/0416 (2013.01); H03K 17/0822 (2013.01);
Abstract

To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side transistor and is operated at a boot power supply voltage with a floating voltage as a reference. A low side area is formed with a circuit operated at a power supply voltage with a low potential side power supply voltage as a reference. A first termination area is disposed in a ring form so as to surround the power supply application area. A second termination area is disposed in a ring form so as to surround the high side area.


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