The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jul. 09, 2018
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Assignee:
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/04 (2006.01); H01S 5/10 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/40 (2006.01); H01S 5/042 (2006.01); H01S 5/187 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3223 (2013.01); H01S 5/021 (2013.01); H01S 5/041 (2013.01); H01S 5/0425 (2013.01); H01S 5/105 (2013.01); H01S 5/187 (2013.01); H01S 5/3086 (2013.01); H01S 5/3224 (2013.01); H01S 5/4006 (2013.01); H01S 5/0424 (2013.01);
Abstract
Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.