The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

May. 23, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventor:

Heejoo Ko, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07C 211/54 (2006.01); C07D 209/86 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); C07C 211/54 (2013.01); C07D 209/86 (2013.01); H01L 51/0059 (2013.01); H01L 51/5004 (2013.01); H01L 51/5056 (2013.01); H01L 51/5278 (2013.01); C07C 2601/14 (2017.05); H01L 51/504 (2013.01); H01L 51/508 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01); H01L 2251/552 (2013.01);
Abstract

An organic light-emitting device includes electrodes and light-emitting units that each include an emission layer; and a charge generation layer, including n- and p-type charge generation layers, disposed between each adjacent pair of light-emitting units. A wavelength of maximum intensity of light emitted from one of the light-emitting units may be different from another, an n-type charge generation layer may have a metal-containing material having a work function of about 2.0 eV to about 4.5 eV, and a p-type charge generation layer may be formed of a hole transport material, an absolute value of a HOMO energy level of the hole transport material being greater than about 5.5 eV, and an absolute value of a LUMO energy level of the hole transport material being less than that of a LUMO energy level of a hole transport layer of a light-emitting unit adjacent to the p-type charge generation layer.


Find Patent Forward Citations

Loading…