The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jan. 21, 2014
Applicant:

Soko Kagaku Co., Ltd., Ishikawa, JP;

Inventors:

Akira Hirano, Aichi, JP;

Cyril Pernot, Aichi, JP;

Tetsuhiko Inazu, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/16 (2010.01); H01L 33/36 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01);
Abstract

A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.


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