The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 29, 2017
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
Yong-Hang Zhang, Scottsdale, AZ (US);
Mathieu Boccard, Tempe, AZ (US);
Zachary Holman, Phoenix, AZ (US);
Yuan Zhao, Mesa, AZ (US);
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);
Abstract
Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiC:H and an i-MgCdTe/n-CdTe/N—MgCdTe double heterostructure (DH), with power conversion efficiency of as high as 17%, Vas high as 1.096 V, and all operational characteristics being substantially better than those of monocrystalline solar cells known to-date. The a-SiC:H layer is configured to enable high built-in potential while, at the same time, allowing the doped absorber to maintain a very long carry lifetime. In comparison, similar undoped CdTe/MgCdTe DH designs reveal a long carrier lifetime of 3.6 μs and an interface recommendation velocity of 1.2 cm/s, which are lower than the record values reported for GaAs/AlGaAs (18 cm/s) and GaAs/GaInP (1.5 cm/s) DHs.