The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 06, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Sundararajan Balasekaran, Yokohama, JP;
Hiroshi Inada, Yokohama, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
An infrared light-receiving device includes an optical absorption layer disposed on a principal surface of a substrate and an optical filter disposed on the optical absorption layer, the optical filter including first, second, and third semiconductor regions that are arranged in that order in a direction from the optical absorption layer to the optical filter, each of the first, second, and third semiconductor regions including an n-type InGaAs layer. The optical absorption layer includes a type-II superlattice structure. The first semiconductor region contains an n-type impurity with a concentration of 2.0×10cmor more. The third semiconductor region contains an n-type impurity with a concentration of 3.0×10cmor less and 8.0×10cmor more. The second semiconductor region contains an n-type impurity with a concentration between the impurity concentration of the first semiconductor region and the impurity concentration of the third semiconductor region.