The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jan. 14, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bing Dang, Chappaqua, NY (US);

John U. Knickerbocker, Monroe, NY (US);

Steven Lorenz Wright, Cortlandt Manor, NY (US);

Cornelia Tsang Yang, Medford, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/024 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/024 (2013.01); H01L 31/1892 (2013.01); H01L 31/1896 (2013.01); Y02E 10/50 (2013.01);
Abstract

A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The optoelectronic device is excitable by light at an application wavelength. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The surrogate substrate has a volume of substrate removed therefrom to form a via. Light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device.


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