The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Sep. 02, 2015
Applicants:

Flisom Ag, Duebendorf, CH;

Empa, Duebendorf, CH;

Inventors:

Patrick Reinhard, Zurich, CH;

Benjamin Bissig, Altdorf, CH;

Stephan Buecheler, Dachsberg, DE;

Ayodhya Nath Tiwari, Meilen, CH;

Fabian Pianezzi, Dübendorf, CH;

Assignees:

FLISOM AG, Duebendorf, CH;

EMPA, Duebendorf, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/04 (2014.01); H01L 27/142 (2014.01); B81C 1/00 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); B81C 1/00031 (2013.01); H01L 21/02104 (2013.01); H01L 21/02365 (2013.01); H01L 27/142 (2013.01); H01L 31/0216 (2013.01); H01L 31/02168 (2013.01); H01L 31/02327 (2013.01); H01L 31/0322 (2013.01); H01L 31/04 (2013.01); B81C 2201/0149 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02568 (2013.01); H01L 21/02664 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method () for fabricating patterns on the surface of a layer of a device (), the method comprising: providing at least one layer (); adding at least one alkali metal (); controlling the temperature () of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings () at the surface of the layer. The method further comprises forming cavities () by dissolving the alkali compound embossings. The method () is advantageous for nanopatterning of devices () without using templates and for the production of high efficiency optoelectronic thin-film devices ().


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