The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 26, 2017
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Chin-Hai Huang, Taoyuan, TW;
Ya-Ju Lu, New Taipei, TW;
Shang-Jung Yang, Taichung, TW;
Yen-Yu Huang, Taoyuan, TW;
Chunghwa Picture Tubes, LTD., Taoyuan, TW;
Abstract
An active device array substrate includes a substrate, first and second active devices, a gate insulation layer and an insulation barrier layer. The first and second active devices respectively includes first and second gate electrodes, first and second semiconductor blocks, first and second source electrodes, and first and second drain electrodes. A film layer of the second source electrode and the second drain electrode is the same with that of the first source electrode or the first drain electrode. The gate insulation layer is located between the first gate electrode and the first semiconductor block and between the second gate electrode and the second semiconductor block. The insulation barrier layer is disposed on the gate insulation layer, and covers the first semiconductor block. The insulation barrier layer has a first through hole for one of the first source electrode and the first drain electrode contacting the first semiconductor block.