The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jun. 16, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Aravind C. Appaswamy, Plano, TX (US);
Akram A. Salman, Plano, TX (US);
Farzan Farbiz, Royal Oak, MI (US);
Gianluca Boselli, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 27/027 (2013.01); H01L 29/1087 (2013.01);
Abstract
A semiconductor device includes a body and a transistor fabricated into the body. Isolation material at least partially encases the body. Biasing is coupled to the isolation material, wherein the biasing is for changing the electric potential of the isolation material in response to an electrostatic discharge event.