The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jan. 30, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Jui-Chun Chang, Hsinchu, TW;
Shih-Kai Wu, Hsinchu, TW;
Cheng-Yu Wang, Chiayi, TW;
Li-Yang Hong, Taoyuan, TW;
Chia-Ming Hsu, Taichung, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a semiconductor layer, a doped region, a device region, a first isolation structure, a second isolation structure and a terminal. The semiconductor layer is disposed over the substrate. The doped region is disposed in the semiconductor layer. The device region is disposed on the doped region and includes a source, a drain and a gate. The first isolation structure is disposed in the semiconductor layer and surrounds the doped region. The second isolation structure surrounds the first isolation structure and is spaced apart from the first isolation structure. The terminal is disposed between the first isolation structure and the second isolation structure, and is equipotential with the source.