The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
May. 15, 2018
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Dae Hwan Chun, Gyeonggi-do, KR;
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Abstract
A semiconductor device is provided and includes an n− type layer disposed at a substrate first surface. A trench, n type region, and p+ type region are disposed on the n− type layer. A p type region is disposed on the n type region. An n+ type region is disposed on the p type region. A gate insulating layer is disposed in the trench. A gate electrode is disposed on the gate insulating layer. A source electrode is disposed on an insulating layer disposed on the gate electrode, n+ type region, and p+ type region. A drain electrode is disposed at a substrate second surface. The n type region includes a first portion contacting the trench side surface and extending parallel to a substrate upper surface and a second portion contacting the first portion, separated from the trench side surface, and extending vertical to the substrate upper surface.