The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Nov. 25, 2015
Applicants:
Douglas Robert Strachan, Lexington, KY (US);
Abhishek Sundararajan, Lexington, KY (US);
Mathias Joseph Boland, Lexington, KY (US);
Inventors:
Douglas Robert Strachan, Lexington, KY (US);
Abhishek Sundararajan, Lexington, KY (US);
Mathias Joseph Boland, Lexington, KY (US);
Assignee:
UNIVERSITY OF KENTUCKY RESEARCH FOUNDATION, Lexington, KY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/24 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66484 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/778 (2013.01); H01L 29/7831 (2013.01); H01L 29/7881 (2013.01); H01L 29/42356 (2013.01);
Abstract
The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the atomically-thin material. The resulting device offers an ultra-short gap with ballistic transport and demonstrated switching in the presence of a gate or dielectric material in close proximity to the channel.