The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jun. 26, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Shoji Kitamura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the second conductivity type, connected with the first semiconductor region; a first electrode forming a Schottky contact with a first semiconductor layer and a first semiconductor region; and a second electrode forming an ohmic contact with the second semiconductor region. A density of the second electrode is lower at a center portion of the silicon carbide semiconductor substrate and increases toward an outer peripheral side.