The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Nov. 09, 2016
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Sang Youl Lee, Seoul, KR;
Chung Song Kim, Seoul, KR;
Ji Hyung Moon, Seoul, KR;
Sun Woo Park, Seoul, KR;
June O Song, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1335 (2013.01); G02F 1/1343 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/134363 (2013.01); G02F 1/136209 (2013.01); G02F 1/136227 (2013.01); H01L 27/1218 (2013.01); H01L 27/1266 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/786 (2013.01); G02F 2001/13685 (2013.01); G02F 2202/101 (2013.01); G02F 2202/102 (2013.01); H01L 27/3244 (2013.01);
Abstract
A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.