The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jul. 05, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Jong Sung Jeon, Gyeonggi-do, KR;
Eun Mee Kwon, Gyeonggi-do, KR;
Da Som Lee, Seoul, KR;
Bong Hoon Lee, Seoul, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 27/1157 (2017.01); G11C 16/30 (2006.01); H01L 27/06 (2006.01); G11C 16/14 (2006.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 29/7827 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor device includes: hole source patterns; electron source patterns located between adjacent hole source patterns; a stack structure over the hole source patterns and the electron source patterns; and channel layers penetrating the stack structure, wherein each channel layer is in contact with a corresponding hole source pattern and an electron source pattern adjacent to the corresponding hole source pattern.