The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Oct. 05, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Katsuhiko Takeuchi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/098 (2006.01); H01L 29/778 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H04B 1/44 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 27/098 (2013.01); H01L 29/778 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H04B 1/44 (2013.01); H01L 27/085 (2013.01);
Abstract
A semiconductor device includes a layered body, a gate electrode, a source electrode, a drain electrode, and a cap layer. The layered body includes a channel layer and a first low resistance region. The channel layer is made of a compound semiconductor. The first low resistance region is provided in a portion on surface side of the layered body. The gate electrode, the source electrode, and the drain electrode are each provided on top surface side of the layered body. The cap layer is provided between the first low resistance region and one or both of the source electrode and the drain electrode.