The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jan. 28, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Stefan Decker, Munich, DE;

Robert Illing, Villach, AT;

Michael Nelhiebel, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/7827 (2013.01); H01L 23/62 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor body includes a load current component having a load current transistor area and a sensor component having a sensor transistor area. The load current transistor area and the sensor transistor area share a same transistor unit construction. The load current transistor area includes first and second transistor area parts, and the sensor transistor area includes a third transistor area part. The first and the third transistor area parts differ from the second transistor area part between the first and the third transistor area parts by a load current transistor area element being absent in the second transistor area part. The second transistor area part is electrically disconnected from a parallel connection of the first and second transistor area parts by the load current transistor area element being absent in the second transistor area part.


Find Patent Forward Citations

Loading…