The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Aug. 04, 2016
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventor:

Takeyoshi Nishimura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/866 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/0696 (2013.01); H01L 29/66348 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/866 (2013.01); H01L 29/94 (2013.01);
Abstract

A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.


Find Patent Forward Citations

Loading…