The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Sep. 14, 2017
Applicant:
Semiconductor Manufacuring International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Chenglong Zhang, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/32136 (2013.01); H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76873 (2013.01); H01L 21/76885 (2013.01); H01L 21/76877 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate; forming an initial metal layer; simultaneously forming a plurality of discrete first metal layers and openings by etching the initial metal layer; forming a plurality of sidewalls covering the side surface of the first metal layers; and forming a plurality of second metal layers to fill the openings.