The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jun. 22, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonngi-Do, KR;
Inventors:
Joon-Nyung Lee, Seoul, KR;
Jeong Hoon Ahn, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5222 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 28/90 (2013.01); H01L 28/92 (2013.01); H01L 28/40 (2013.01); H01L 28/82 (2013.01);
Abstract
A semiconductor device includes a first electrode which includes a first main portion, and a first extension that extends from the first main portion, and a dielectric layer which surrounds a sidewall and a bottom surface of the first main portion, wherein the first main portion includes a first portion having a first depth, and a second portion having a second depth deeper than the first depth.