The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jun. 22, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inho Kim, Suwon-si, KR;
Woohyun Lee, Hwaseong-si, KR;
Oik Kwon, Yongin-si, KR;
Sang-Kuk Kim, Seongnam-si, KR;
Yeonji Kim, Suwon-si, KR;
Jongchul Park, Seongnam-si, KR;
Abstract
A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.