The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
May. 13, 2018
Nanya Technology Corporation, New Taipei, TW;
Shing-Yih Shih, New Taipei, TW;
Szu-Han Chen, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of manufacturing a semiconductor device includes: forming a first patterned target layer on a substrate having a first region and a second region, the first patterned target layer has first stripes and first openings along a first direction; sequentially forming a lower hardmask layer and a middle hardmask layer covering the first patterned target layer; forming a patterned upper hardmask layer on the middle hardmask layer, the patterned upper hardmask layer has second stripes and second openings along a second direction and exposing a portion of the middle hardmask layer; etching the exposed portion of the middle hardmask layer to form third openings exposing a portion of the lower hardmask layer; and etching the exposed portion of the lower hardmask layer and the first patterned target layer thereunder to form a second patterned target layer having rounded patterns on the first region.