The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 11, 2015
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/764 (2006.01); H01L 23/48 (2006.01); H01L 27/02 (2006.01); H01L 21/8249 (2006.01); H01L 21/84 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/76898 (2013.01); H01L 21/8249 (2013.01); H01L 21/84 (2013.01); H01L 23/481 (2013.01); H01L 24/83 (2013.01); H01L 27/0207 (2013.01); H01L 21/7682 (2013.01); H01L 2224/83001 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.