The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Oct. 11, 2017
Applicant:
Lawrence Livermore National Security, Llc, Livermore, CA (US);
Inventor:
Aiden Alexander Martin, Walnut Creek, CA (US);
Assignee:
Lawrence Livermore National Security, LLC, Livermore, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C23C 14/0635 (2013.01); C23C 14/221 (2013.01); H01L 21/67213 (2013.01);
Abstract
A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an electron beam into the vacuum chamber onto to the surface of the substrate. The electron beam dissociates the gaseous silicon-carbide precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a silicon-carbide film.
Martin, Aiden. (2019). Localized electron beam induced deposition of silicon carbide (U.S. Patent No. 10395923). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10395923
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile