The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Apr. 12, 2017
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyo Yeol Lee, Suwon-si, KR;

Seung Mo Lim, Suwon-si, KR;

Dong Joon Oh, Suwon-si, KR;

Yun Sung Kang, Suwon-si, KR;

Hai Joon Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/012 (2006.01); H01G 4/30 (2006.01); H01G 4/008 (2006.01); H01L 49/02 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/306 (2013.01); H01L 28/75 (2013.01); H01G 4/10 (2013.01); H01G 4/12 (2013.01);
Abstract

A thin film capacitor includes a capacitor body formed by alternately stacking first and second electrode layers and a dielectric layer on a substrate, and having the second electrode layer disposed in an uppermost portion thereof, and a stress alleviation layer formed on the uppermost second electrode layer. The stress alleviation layer is formed of a material having a coefficient of thermal expansion higher than those of the substrate and the dielectric layer.


Find Patent Forward Citations

Loading…