The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Oct. 26, 2016
Applicant:

Kyocera Corporation, Kyoto-shi, Kyoto, JP;

Inventors:

Masahiro Nishigaki, Kirishima, JP;

Hideyuki Osuzu, Kirishima, JP;

Jun Ueno, Kirishima, JP;

Masaaki Nagoya, Kirishima, JP;

Shota Mukoyama, Kirishima, JP;

Assignee:

KYOCERA Corporation, Kyoto-Shi, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); C04B 35/468 (2006.01); C04B 35/626 (2006.01); C04B 35/63 (2006.01); C04B 35/634 (2006.01); C04B 35/638 (2006.01); C04B 35/64 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/51 (2006.01); C04B 41/88 (2006.01); H01G 4/232 (2006.01); H01G 4/30 (2006.01); H01G 4/248 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C04B 35/4682 (2013.01); C04B 35/6261 (2013.01); C04B 35/6264 (2013.01); C04B 35/6303 (2013.01); C04B 35/638 (2013.01); C04B 35/6342 (2013.01); C04B 35/64 (2013.01); C04B 41/009 (2013.01); C04B 41/4578 (2013.01); C04B 41/5144 (2013.01); C04B 41/88 (2013.01); H01G 4/232 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/36 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/663 (2013.01); C04B 2235/72 (2013.01); C04B 2235/785 (2013.01); C04B 2235/79 (2013.01); C04B 2235/85 (2013.01); H01G 4/248 (2013.01); H01G 4/30 (2013.01);
Abstract

The dielectric layers are formed from a dielectric porcelain formed from crystal particles containing barium titanate as a main component and containing a rare earth element, and the crystal particles have, in a particle boundary vicinity, a low concentration region in which the concentration of the rare earth element is lower than the concentration of the rare earth element in an inside. The crystal particles further contain vanadium, and the low concentration region contains a larger amount of the vanadium than the amount of the vanadium in the inside. The crystal particles further contain magnesium and manganese, and the magnesium and the manganese have a concentration gradient that is at a maximum at the particle boundary vicinity and that lowers toward the inside.


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