The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Oct. 23, 2017
Synopsys, Inc., Mountain View, CA (US);
Andrew E. Horch, Seattle, WA (US);
Martin Luc Cecil Arthur Niset, Seattle, WA (US);
Ting-Jia Hu, Seattle, WA (US);
Synposys, Inc., Mountain View, CA (US);
Abstract
A one-time programmable memory device includes a well of a first polarity in a semiconductor substrate. A lightly-doped drain (LDD) region is above one portion of the well. The LDD region has a first doping concentration and a second polarity that is opposite the first polarity. A source region or a drain region of the second polarity is above another portion of the well. The source region or the drain region has a second doping concentration that is higher than the first doping concentration. A first breakdown voltage between the LDD region and the well region is higher than a second breakdown voltage between the source region or the drain region and the well region. A select device is positioned at least partially above a portion of the source region or the drain region. The select device is configured to form a channel between the source region or the drain region and the LDD region. An anti-fuse device is positioned at least partially above a portion of the LDD region.