The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 05, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shih-Hao Liu, Taoyuan, TW;
Leuh Fang, Baoshan Township, Hsinchu County, TW;
Chih-Cherng Liao, Jhudong Township, Hsinchu County, TW;
Yun-Chou Wei, Taipei, TW;
Chung-Ren Lao, Taichung, TW;
Wu-Hsi Lu, New Taipei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
Embodiments of the disclosure relate to a semiconductor device. The semiconductor device includes a semiconductor substrate, a first metal wiring layer disposed on the semiconductor substrate, an interlayer dielectric layer (ILD) disposed on the first metal wiring layer, a second metal wiring layer disposed on the interlayer dielectric layer, and a first via and a second via disposed in the interlayer dielectric layer. The second via is on the first via, and there is not any metal wiring layer in the interlayer dielectric layer.