Gate boosting circuit and method for an integrated power stage

Abstract

Systems and methods according to one or more embodiments are provided for gate boosted drivers for integrated power stages. In one example, a gate driver includes an output stage comprising an n-channel metal-oxide-semiconductor (NMOS) pull-up transistor and an NMOS pull-down transistor, where the NMOS pull-up transistor and the NMOS pull-down transistor are coupled at an output node. The gate driver further includes a bootstrap circuit comprising a main bootstrap capacitor, where the bootstrap capacitor provides a supply voltage for driving the NMOS pull-up transistor. The gate driver further includes a high voltage generator coupled with the main bootstrap capacitor via a transistor switch and a replica bootstrap circuit comprising a replica bootstrap capacitor. The replica bootstrap circuit generates a reference voltage that regulates a drain current of the transistor switch, and the regulated drain current of the transistor switch charges the main bootstrap capacitor from the high voltage generator.